DocumentCode :
1267261
Title :
Reduction of AlGaAs Heterostructure High-Index-Contrast Ridge Waveguide Scattering Loss by Sidewall Smoothing Through Oxygen-Enhanced Wet Thermal Oxidation
Author :
Seibert, Christopher S. ; Hall, Douglas C. ; Liang, Di ; Shellenbarger, Zane A.
Author_Institution :
Electr. Eng. Dept., Univ. of Notre Dame, Notre Dame, IN, USA
Volume :
22
Issue :
1
fYear :
2010
Firstpage :
18
Lastpage :
20
Abstract :
We demonstrate the efficacy of oxidation smoothing of sidewall roughness in high-index-contrast AlGaAs heterostructure ridge waveguides via oxygen-enhanced nonselective wet thermal oxidation for reducing scattering loss. Single-mode waveguides of core widths between 1.5 and 2.2 ??m are fabricated using both the inward growth of a ~ 600-nm sidewall-smoothing native oxide outer cladding and, for comparison, encapsulation of an unoxidized etched ridge with a ~ 600-nm deposited silicon oxide cladding layer. On average, measured loss coefficients are reduced by a factor of 2 with the oxidation smoothing process.
Keywords :
aluminium compounds; etching; gallium arsenide; optical losses; optical waveguides; oxidation; ridge waveguides; semiconductor heterojunctions; AlGaAs; loss coefficients; ridge waveguide; scattering loss; semiconductor heterostructure; sidewall smoothing; single-mode waveguides; size 1.55 mum to 2.2 mum; wet thermal oxidation; Optical losses; optical scattering; oxidation; ridge waveguides (RWGs);
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2009.2035328
Filename :
5313924
Link To Document :
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