• DocumentCode
    1267261
  • Title

    Reduction of AlGaAs Heterostructure High-Index-Contrast Ridge Waveguide Scattering Loss by Sidewall Smoothing Through Oxygen-Enhanced Wet Thermal Oxidation

  • Author

    Seibert, Christopher S. ; Hall, Douglas C. ; Liang, Di ; Shellenbarger, Zane A.

  • Author_Institution
    Electr. Eng. Dept., Univ. of Notre Dame, Notre Dame, IN, USA
  • Volume
    22
  • Issue
    1
  • fYear
    2010
  • Firstpage
    18
  • Lastpage
    20
  • Abstract
    We demonstrate the efficacy of oxidation smoothing of sidewall roughness in high-index-contrast AlGaAs heterostructure ridge waveguides via oxygen-enhanced nonselective wet thermal oxidation for reducing scattering loss. Single-mode waveguides of core widths between 1.5 and 2.2 ??m are fabricated using both the inward growth of a ~ 600-nm sidewall-smoothing native oxide outer cladding and, for comparison, encapsulation of an unoxidized etched ridge with a ~ 600-nm deposited silicon oxide cladding layer. On average, measured loss coefficients are reduced by a factor of 2 with the oxidation smoothing process.
  • Keywords
    aluminium compounds; etching; gallium arsenide; optical losses; optical waveguides; oxidation; ridge waveguides; semiconductor heterojunctions; AlGaAs; loss coefficients; ridge waveguide; scattering loss; semiconductor heterostructure; sidewall smoothing; single-mode waveguides; size 1.55 mum to 2.2 mum; wet thermal oxidation; Optical losses; optical scattering; oxidation; ridge waveguides (RWGs);
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2009.2035328
  • Filename
    5313924