DocumentCode :
1267542
Title :
V-band low phase noise QVCO in 90nm CMOS technology using a gate-connected tank
Author :
Banin, R. ; Degani, O. ; Socher, Eran
Author_Institution :
Sch. of Electr. Eng., Tel Aviv Univ., Tel Aviv, Israel
Volume :
48
Issue :
17
fYear :
2012
Firstpage :
1046
Lastpage :
1048
Abstract :
A quadrature voltage controlled oscillator (QVCO) with -111 dBc/Hz average phase noise at 1MHz offset across an output frequency range of 48.9-50.3-GHz is presented. The design employs a modification of the Armstrong technique of using a transformer in the LC tank to improve the phase noise by reducing the single-ended component of the tank capacitance in a differential cross-coupled design and by separating the gate and drain transistor bias. Tuning is achieved by an accumulation MOS varactor and a thermometer-coded bank of 14 switched capacitors. The design consumes 23-mA from a 1.3 V supply and occupies an area of 0.25-mm2 in 90 nm CMOS technology.
Keywords :
CMOS integrated circuits; field effect MIMIC; millimetre wave oscillators; phase noise; switched capacitor networks; thermometers; transformers; varactors; voltage-controlled oscillators; Armstrong technique; CMOS technology; LC tank; V-band low phase noise QVCO; accumulation MOS varactor; current 23 mA; differential cross-coupled design; drain transistor bias; frequency 48.9 GHz to 50.3 GHz; gate transistor bias; gate-connected tank; quadrature voltage controlled oscillator; single-ended component; size 90 nm; switched capacitors; tank capacitance; thermometer-coded bank; transformer; voltage 1.3 V;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el.2012.1696
Filename :
6272442
Link To Document :
بازگشت