DocumentCode
1267608
Title
4 Gbit/s pin/HBT monolithic photoreceiver
Author
Chandrasekhar, S. ; Dentai, A.G. ; Joyner, Charles H. ; Johnson, Brett C. ; Gnauck, A.H. ; Qua, G.J.
Author_Institution
AT&T Bell Labs., Holmdel, NJ, USA
Volume
26
Issue
22
fYear
1990
Firstpage
1880
Lastpage
1882
Abstract
Heterojunction bipolar transistors have been monolithically integrated with a pin photodetector to realise a high speed transimpedance photoreceiver. The OEIC, made from MOVPE-growth InP/InGaAs heterostructures, had a bandwidth of 2.8 GHz with a transimpedance of 750 Omega . It was successfully operated at 4 Gbit/s with a sensitivity of -21 dBm at a wavelength of 1.5 mu m.
Keywords
III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; integrated optoelectronics; optical communication equipment; photodetectors; receivers; 1.5 micron; 2.8 GHz; 4 Gbit/s; HBT; InP-InGaAs heterostructures; MOVPE-growth; OEIC; high speed transimpedance photoreceiver; monolithic photoreceiver; optoelectronic integrated circuits; pin photodetector;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901209
Filename
59479
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