Title :
Accurate high-frequency equivalent circuit model of silicon MOSFETs
Author :
Lee, Seonghearn ; Yu, Hyun Kyu
Author_Institution :
Dept. of Electron. Eng., Hankuk Univ. of Foreign Studies, Kyungki, South Korea
fDate :
8/19/1999 12:00:00 AM
Abstract :
The serious problem caused by the extraction of MOSFET parameters using a conventional small-signal model is addressed. It is overcome by developing an improved small-signal model where the drain-bulk junction capacitance is connected to the external source. The model is validated by finding model parameters exhibiting frequency independence while maintaining their physical character, using a modified direct extraction approach
Keywords :
MOSFET; capacitance; elemental semiconductors; equivalent circuits; semiconductor device models; silicon; MOSFETs; Si; drain-bulk junction capacitance; frequency independence; high-frequency equivalent circuit model; model parameters; modified direct extraction approach; physical character; small-signal model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990980
