Charge-sensitive amplifier front-end with an nJFET and a forward-biased reset diode

Author

Fazzi, A. ; Jalas, P. ; Rehak, P. ; Holl, P.

Author_Institution

Politecnico di Milano, Italy

Volume

43

Issue

6

fYear

1996

fDate

12/1/1996 12:00:00 AM

Firstpage

3218

Lastpage

3222

Abstract

A new configuration of a resistorless charge sensitive preamplifier with an nJFET as an input device was tested. The DC level of the input of the amplifier was kept constant by a slightly forward-biased np junction connected between the input of the amplifier and ground. A noise level of 22 root mean square (r.m.s.) electrons is measured at 295 K and 15 r.m.s. electrons at 253 K. The dynamic behavior of the amplifier is investigated with different leakage current conditions. The technological benefits and the suitability of the front-end connection for room temperature detectors, particularly multianode drift chambers, are highlighted

Keywords

JFET integrated circuits; detector circuits; drift chambers; instrumentation amplifiers; leakage currents; nuclear electronics; preamplifiers; semiconductor device noise; silicon radiation detectors; 253 K; 295 K; charge-sensitive amplifier front-end; forward-biased reset diode; input device; leakage current conditions; multianode Si drift chambers; nJFET; resistorless charge sensitive preamplifier; room temperature detectors; slightly forward-biased np junction; Current measurement; Detectors; Electrons; Land surface temperature; Leakage current; Noise level; Noise measurement; Preamplifiers; Root mean square; Testing;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.552721

Filename

552721