• DocumentCode
    1267984
  • Title

    Three-dimensional nonequilibrium interface conditions for electron transport at band edge discontinuities

  • Author

    Schroeder, Dietmar

  • Author_Institution
    Tech. Electron., Tech. Univ. of Hamburg-Harburg, West Germany
  • Volume
    9
  • Issue
    11
  • fYear
    1990
  • fDate
    11/1/1990 12:00:00 AM
  • Firstpage
    1136
  • Lastpage
    1140
  • Abstract
    The author addresses the problem of boundary conditions for electron transport at interfaces of different material species from a fundamental microscopic point of view in order to derive self-consistent boundary conditions for various transport models and to help select a suitable model for the consideration of interface effects. A three-dimensional nonequilibrium interface condition for the Boltzmann equation at heterojunctions is set up, where the heterojunction is modeled by a band-edge discontinuity. From this interface condition, respective conditions for the moments of the distribution function are derived. Application to a selected transport model results in conditions stating continuity of quasi-Fermi level, electron temperature, and the normal component of the particle current density, and yields relations between the tangential components of the particle- and energy-flux vectors on both sides of the interface. These interface conditions enable numerical simulations of hot electron transport to be carried out at abrupt interfaces of different material species
  • Keywords
    conduction bands; hot carriers; interface phenomena; semiconductor device models; semiconductor junctions; 3D interface conditions; Boltzmann equation; abrupt interfaces; band edge discontinuities; boundary conditions; distribution function moments; electron temperature; electron transport; energy-flux vectors; heterojunctions; hot electron; numerical simulations; particle current density; particle flux vectors; quasi-Fermi level; three-dimensional nonequilibrium interface condition; transport models; Boltzmann equation; Boundary conditions; Current density; Distribution functions; Electron microscopy; Heterojunctions; Numerical simulation; Semiconductor devices; Semiconductor materials; Temperature;
  • fLanguage
    English
  • Journal_Title
    Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0278-0070
  • Type

    jour

  • DOI
    10.1109/43.62750
  • Filename
    62750