DocumentCode
1267984
Title
Three-dimensional nonequilibrium interface conditions for electron transport at band edge discontinuities
Author
Schroeder, Dietmar
Author_Institution
Tech. Electron., Tech. Univ. of Hamburg-Harburg, West Germany
Volume
9
Issue
11
fYear
1990
fDate
11/1/1990 12:00:00 AM
Firstpage
1136
Lastpage
1140
Abstract
The author addresses the problem of boundary conditions for electron transport at interfaces of different material species from a fundamental microscopic point of view in order to derive self-consistent boundary conditions for various transport models and to help select a suitable model for the consideration of interface effects. A three-dimensional nonequilibrium interface condition for the Boltzmann equation at heterojunctions is set up, where the heterojunction is modeled by a band-edge discontinuity. From this interface condition, respective conditions for the moments of the distribution function are derived. Application to a selected transport model results in conditions stating continuity of quasi-Fermi level, electron temperature, and the normal component of the particle current density, and yields relations between the tangential components of the particle- and energy-flux vectors on both sides of the interface. These interface conditions enable numerical simulations of hot electron transport to be carried out at abrupt interfaces of different material species
Keywords
conduction bands; hot carriers; interface phenomena; semiconductor device models; semiconductor junctions; 3D interface conditions; Boltzmann equation; abrupt interfaces; band edge discontinuities; boundary conditions; distribution function moments; electron temperature; electron transport; energy-flux vectors; heterojunctions; hot electron; numerical simulations; particle current density; particle flux vectors; quasi-Fermi level; three-dimensional nonequilibrium interface condition; transport models; Boltzmann equation; Boundary conditions; Current density; Distribution functions; Electron microscopy; Heterojunctions; Numerical simulation; Semiconductor devices; Semiconductor materials; Temperature;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.62750
Filename
62750
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