DocumentCode :
1267984
Title :
Three-dimensional nonequilibrium interface conditions for electron transport at band edge discontinuities
Author :
Schroeder, Dietmar
Author_Institution :
Tech. Electron., Tech. Univ. of Hamburg-Harburg, West Germany
Volume :
9
Issue :
11
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
1136
Lastpage :
1140
Abstract :
The author addresses the problem of boundary conditions for electron transport at interfaces of different material species from a fundamental microscopic point of view in order to derive self-consistent boundary conditions for various transport models and to help select a suitable model for the consideration of interface effects. A three-dimensional nonequilibrium interface condition for the Boltzmann equation at heterojunctions is set up, where the heterojunction is modeled by a band-edge discontinuity. From this interface condition, respective conditions for the moments of the distribution function are derived. Application to a selected transport model results in conditions stating continuity of quasi-Fermi level, electron temperature, and the normal component of the particle current density, and yields relations between the tangential components of the particle- and energy-flux vectors on both sides of the interface. These interface conditions enable numerical simulations of hot electron transport to be carried out at abrupt interfaces of different material species
Keywords :
conduction bands; hot carriers; interface phenomena; semiconductor device models; semiconductor junctions; 3D interface conditions; Boltzmann equation; abrupt interfaces; band edge discontinuities; boundary conditions; distribution function moments; electron temperature; electron transport; energy-flux vectors; heterojunctions; hot electron; numerical simulations; particle current density; particle flux vectors; quasi-Fermi level; three-dimensional nonequilibrium interface condition; transport models; Boltzmann equation; Boundary conditions; Current density; Distribution functions; Electron microscopy; Heterojunctions; Numerical simulation; Semiconductor devices; Semiconductor materials; Temperature;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.62750
Filename :
62750
Link To Document :
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