DocumentCode
1268009
Title
The Monte Carlo method for semiconductor device and process modeling
Author
Lugli, Paol
Author_Institution
Dipartimento di Ingegneria Meccanica, Roma Univ., Italy
Volume
9
Issue
11
fYear
1990
fDate
11/1/1990 12:00:00 AM
Firstpage
1164
Lastpage
1176
Abstract
A critical review of the Monte Carlo (MC) simulation as applied to semiconductor device and process modeling is presented. The general method is discussed, and some special features that can be very useful in particular situations are examined. It is shown that the MC method is a mature technique for modeling and can offer great advantages over more traditional approaches. Critical points are pointed out and analyzed. A variety of applications are then outlined
Keywords
Monte Carlo methods; reviews; semiconductor device models; semiconductor technology; Monte Carlo method; process modeling; review; semiconductor device; Application software; Debugging; Integrodifferential equations; Monte Carlo methods; Neutrons; Nuclear power generation; Probability; Semiconductor devices; Testing; Uncertainty;
fLanguage
English
Journal_Title
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher
ieee
ISSN
0278-0070
Type
jour
DOI
10.1109/43.62753
Filename
62753
Link To Document