Title :
Index-coupled DFB lasers with surface grating
Author :
Johannes, T.W. ; Rieger, J. ; von Keutz, U. ; Schier, M. ; Walter, J.W. ; Harth, W.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
fDate :
8/19/1999 12:00:00 AM
Abstract :
A new fabrication scheme for index-coupled DFB lasers with surface grating is presented. By using this method epitaxial grating overgrowth and Bragg-grating formation on a non-planar surface are avoided. InGaAsP lasers operating at λ=1.55 μm show a continuous wave (CW) threshold current of 24 mA at room temperature. For as-cleaved devices a sidemode suppression ratio (SMSR) of 40 dB and monomode operation over 10 mW single sided output power have been achieved
Keywords :
Bragg gratings; III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; optical fabrication; semiconductor lasers; 1.55 micron; 10 mW; 24 mA; Bragg-grating; InGaAsP; InGaAsP lasers; as-cleaved devices; continuous wave threshold current; fabrication scheme; index-coupled DFB lasers; monomode operation; room temperature; sidemode suppression ratio; single sided output power; surface grating;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19991008
