Title :
Nanoscale RingFETs
Author :
Williams, Nicholas ; Silva, Helena ; Gokirmak, Ali
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Connecticut, Storrs, CT, USA
Abstract :
Nanoscale RingFETs with effective gate lengths of 22, 32, and 45 nm and inner implanted region radius from 5 to 25 nm with inner or outer drain positions are studied using rotational symmetric 2-D hydrodynamic finite element simulations. In this geometry, the active area is wrapped around itself; hence, the device does not suffer from leakage currents induced by the defects and fixed charges at the side interfaces. The simulation results show that if the inner contact is used as the drain, the impact of the drain fields on the source barrier is significantly reduced as the gate length is scaled below 45 nm.
Keywords :
field effect transistors; finite element analysis; geometry; active area; geometry; inner drain positions; nanoscale ringFET; outer drain positions; rotational symmetric 2D hydrodynamic finite element simulations; size 22 nm; size 32 nm; size 45 nm; source barrier; Dielectrics; FinFETs; Hafnium compounds; Leakage current; Logic gates; Nanoscale devices; Silicon; Finite element methods; MOSFETs; leakage current; nanoelectronics; silicon devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2208093
