Three-Dimensional Coaxial Through-Silicon-Via (TSV) Design

Author

Xu, Zheng ; Lu, Jian-Qiang

Author_Institution

IBM Microelectron., Hopewell Junction, NY, USA

Volume

33

Issue

10

fYear

2012

Firstpage

1441

Lastpage

1443

Abstract

Being one of the most attractive 3-D integration solutions, through-silicon-vias (TSVs) electrically connect multiple strata of integrated circuits and/or devices in a vertical fashion. This paper examines the electrical performance of coaxial TSV, which is a new configuration that offers better signal integrity than other TSV structures. Various processing materials and physical geometries are considered for coaxial TSV designs. The full-wave extraction and empirical calculations show good agreement in TSV passive elements (RLGC). Latency, power, and crosstalk are evaluated and compared between coaxial TSVs and common signal-ground (S-G) paired TSVs. Furthermore, a wideband SPICE model is established to well fit the coaxial TSV fullwave solution, facilitating 3-D system design and evaluation.

Keywords

SPICE; integrated circuit design; integrated circuit modelling; three-dimensional integrated circuits; 3D coaxial TSV Design; RLGC; S-G paired TSV; SPICE model; TSV passive elements; full-wave extraction; physical geometries; processing materials; signal-ground paired TSV; three-dimensional coaxial through-silicon-via design; through-silicon-via integrated circuits; Conductivity; Conductors; Crosstalk; Silicon; Solid modeling; Substrates; Through-silicon vias; 3-D integration; Coaxial; RLGC; modeling; parasitics extraction; through-silicon-via (TSV);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2207703

Filename

6275470