Title :
Influence on power performances at 60 GHz of indium composition in metamorphic HEMTs
Author :
Gaquière, C. ; Bollaert, S. ; Zaknoune, M. ; Cordier, Y. ; Theron, D. ; Crosnier, Y.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Villeneuve d´´Ascq, France
fDate :
8/19/1999 12:00:00 AM
Abstract :
For the first time the impact of indium composition influence on the power performances of metamorphic HEMTs with 0.25 μm gate length has been investigated at 60 GHz. These first power results at this frequency show that such HEMTs are very promising for power applications
Keywords :
III-V semiconductors; millimetre wave field effect transistors; power HEMT; 0.25 micron; 60 GHz; III-V semiconductors; gate length; metamorphic HEMTs; power applications; power performance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990988
