Title :
InGaAs/InAlAs superlattice oscillator at 147 GHz
Author :
Schomburg, E. ; Scheuerer, R. ; Brandl, S. ; Renk, K.F. ; Pavel´ev, D.G. ; Koschurinov, Yu. ; Ustinov, V. ; Zhukov, A. ; Kovsh, A. ; Kop´ev, P.S.
Author_Institution :
Inst. fur Angewandte Phys., Regensburg Univ., Germany
fDate :
8/19/1999 12:00:00 AM
Abstract :
The authors report the generation of radiation at 147 GHz with an InGaAs/InAlAs superlattice oscillator. The generation is attributed to current oscillation due to propagating dipole domains. These are a consequence of the negative differential mobility caused by the miniband transport. The power of the emission was ~80 μW with a DC to RF conversion efficiency of 0.5%
Keywords :
III-V semiconductors; aluminium compounds; carrier mobility; gallium arsenide; indium compounds; millimetre wave generation; millimetre wave oscillators; semiconductor superlattices; 0.5 percent; 147 GHz; 80 muW; DC to RF conversion efficiency; InGaAs-InAlAs; current oscillation; millimetre-wave oscillators; miniband transport; negative differential mobility; propagating dipole domains; superlattice oscillator;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990973
