Title :
Transferred InP-based HBVs on glass substrate
Author :
Arscott, S. ; Mounaix, P. ; Lippens, D.
Author_Institution :
Inst. d´´Electron. et de Microelectron. du Nord, Univ. des Sci. et Technol. de Lille, Villeneuve d´´Ascq, France
fDate :
8/19/1999 12:00:00 AM
Abstract :
Transferred-substrate InP-based heterostructure barrier varactor devices are reported which have been fabricated on glass substrate following a novel epitaxial layer transfer technique utilising the negative photoresist SU-8. The transferred devices exhibit a leakage current of 4.5 A/cm2 at 10 V, a zero-bias capacitance of 1 fF/μm2 and a capacitance ratio of 5:1
Keywords :
III-V semiconductors; indium compounds; photoresists; semiconductor epitaxial layers; varactors; InP; SU-8 negative photoresist; capacitance ratio; epitaxial layer transfer; glass substrate; leakage current; transferred-substrate InP heterostructure barrier varactor device; zero-bias capacitance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990984
