DocumentCode :
1268305
Title :
Design Techniques for Fully Integrated Switched-Capacitor DC-DC Converters
Author :
Le, Hanh-Phuc ; Sanders, Seth R. ; Alon, Elad
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California at Berkeley, Berkeley, CA, USA
Volume :
46
Issue :
9
fYear :
2011
Firstpage :
2120
Lastpage :
2131
Abstract :
This paper describes design techniques to maximize the efficiency and power density of fully integrated switched-capacitor (SC) DC-DC converters. Circuit design methods are proposed to enable simplified gate drivers while supporting multiple topologies (and hence output voltages). These methods are verified by a proof-of-concept converter prototype implemented in 0.374 mm2 of a 32 nm SOI process. The 32-phase interleaved converter can be configured into three topologies to support output voltages of 0.5 V-1.2 V from a 2 V input supply, and achieves 79.76% efficiency at an output power density of 0.86 W/mm2 .
Keywords :
DC-DC power convertors; capacitor switching; driver circuits; logic gates; silicon-on-insulator; switching convertors; 32-phase interleaved converter; SOI process; circuit design method; design techniques; fully integrated switched capacitor DC-DC converter; gate drivers; multiple topologies; power density; proof-of-concept converter prototype; voltage 0.5 V to 1.2 V; voltage 2 V; Capacitance; Capacitors; Logic gates; Resistance; Switches; Switching frequency; Topology; DC-DC conversion; design techniques; fully integrated converter; switched-capacitor; switching converter;
fLanguage :
English
Journal_Title :
Solid-State Circuits, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9200
Type :
jour
DOI :
10.1109/JSSC.2011.2159054
Filename :
5948387
Link To Document :
بازگشت