Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs

Author

Shirokov, Mikhail S. ; Cherepko, Sergey V. ; Du, Xiaohang ; Kwang, J.C.M. ; Teeter, Douglas A.

Author_Institution

Adv. Device Center, Raytheon RF Components, Andover, MA, USA

Volume

50

Issue

4

fYear

2002

fDate

4/1/2002 12:00:00 AM

Firstpage

1084

Lastpage

1094

Abstract

High-current effects in InGaP/GaAs heterojunction bipolar transistors (HBTs) were modeled and characterized. In addition to the self-heating effect, high currents were found to degrade large-signal performance mainly through Kirk and quasi-saturation effects. New formalisms in terms of base transit time and base-collector diffusion capacitance were used to modify the conventional Gummel-Poon model. This new model was verified against large-signal characteristics measured at 2 GHz. The validity of the new model for HBTs of different emitter geometry was also explored

Keywords

III-V semiconductors; UHF bipolar transistors; carrier lifetime; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; 2 to 30 GHz; Gummel-Poon model; InGaP-GaAs; Kirk effects; base transit time; base-collector diffusion capacitance; charge carrier injection; charge carrier lifetime; equivalent-circuit models; forward diffusion charge model; heterojunction bipolar transistors; high-current effects; large-signal modeling; microwave devices; microwave power amplifiers; quasi-saturation effects; self-heating effect; Capacitance; Charge carrier processes; Current density; Gallium arsenide; Heterojunction bipolar transistors; Inductance; Kirk field collapse effect; Radio frequency; Temperature; Voltage;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.993410

Filename

993410