Title :
Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs
Author :
Shirokov, Mikhail S. ; Cherepko, Sergey V. ; Du, Xiaohang ; Kwang, J.C.M. ; Teeter, Douglas A.
Author_Institution :
Adv. Device Center, Raytheon RF Components, Andover, MA, USA
fDate :
4/1/2002 12:00:00 AM
Abstract :
High-current effects in InGaP/GaAs heterojunction bipolar transistors (HBTs) were modeled and characterized. In addition to the self-heating effect, high currents were found to degrade large-signal performance mainly through Kirk and quasi-saturation effects. New formalisms in terms of base transit time and base-collector diffusion capacitance were used to modify the conventional Gummel-Poon model. This new model was verified against large-signal characteristics measured at 2 GHz. The validity of the new model for HBTs of different emitter geometry was also explored
Keywords :
III-V semiconductors; UHF bipolar transistors; carrier lifetime; equivalent circuits; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device models; 2 to 30 GHz; Gummel-Poon model; InGaP-GaAs; Kirk effects; base transit time; base-collector diffusion capacitance; charge carrier injection; charge carrier lifetime; equivalent-circuit models; forward diffusion charge model; heterojunction bipolar transistors; high-current effects; large-signal modeling; microwave devices; microwave power amplifiers; quasi-saturation effects; self-heating effect; Capacitance; Charge carrier processes; Current density; Gallium arsenide; Heterojunction bipolar transistors; Inductance; Kirk field collapse effect; Radio frequency; Temperature; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
