Title :
SITAR-an efficient 3-D simulator for optimization of nonplanar trench structures
Author :
Bergner, Wolfgang ; Kircher, Roland
Author_Institution :
Siemens AG, Munchen, West Germany
fDate :
11/1/1990 12:00:00 AM
Abstract :
A 3-D device simulator which allows the investigation of the electrical behavior of nonplanar trench-type device structures is presented. It has been used to analyze leakage due to punchthrough between neighboring trench capacitors, depending on geometry and doping profiles. Using an analytical model to estimate the leakage current and a completely vectorized solution algorithm for all three semiconductor equations, the program proved to be a very efficient tool for optimizing the cell size of 4- and 16-Mb DRAMs
Keywords :
digital simulation; electronic engineering computing; leakage currents; optimisation; semiconductor device models; 16 Mbit; 3D device simulator; 4 Mbit; DRAMs; SITAR; Siemens trench analyser; electrical behavior; leakage current; nonplanar trench structures; optimization; punchthrough; semiconductor equations; vectorized solution algorithm; Analytical models; Capacitors; Conductors; Current density; Doping profiles; Equations; Finite difference methods; Geometry; Material storage; Silicon;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
