SITAR-an efficient 3-D simulator for optimization of nonplanar trench structures

Author

Bergner, Wolfgang ; Kircher, Roland

Author_Institution

Siemens AG, Munchen, West Germany

Volume

9

Issue

11

fYear

1990

fDate

11/1/1990 12:00:00 AM

Firstpage

1184

Lastpage

1188

Abstract

A 3-D device simulator which allows the investigation of the electrical behavior of nonplanar trench-type device structures is presented. It has been used to analyze leakage due to punchthrough between neighboring trench capacitors, depending on geometry and doping profiles. Using an analytical model to estimate the leakage current and a completely vectorized solution algorithm for all three semiconductor equations, the program proved to be a very efficient tool for optimizing the cell size of 4- and 16-Mb DRAMs

Keywords

digital simulation; electronic engineering computing; leakage currents; optimisation; semiconductor device models; 16 Mbit; 3D device simulator; 4 Mbit; DRAMs; SITAR; Siemens trench analyser; electrical behavior; leakage current; nonplanar trench structures; optimization; punchthrough; semiconductor equations; vectorized solution algorithm; Analytical models; Capacitors; Conductors; Current density; Doping profiles; Equations; Finite difference methods; Geometry; Material storage; Silicon;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.62755

Filename

62755