Title :
1.58-GHz Third-Order CMOS Active Bandpass Filter With Improved Passband Flatness
Author :
Lee, Meng-Lin ; Wu, Hsien-Shun ; Tzuang, Ching-Kuang Clive
Author_Institution :
Grad. Inst. of Commun. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents a third-order active bandpass filter (BPF), realized in an area of 0.58% λ0 by 0.44% λ0 at 1.58 GHz (not including contact pads and λ0 is the free-space wavelength at 1.58 GHz) using standard 0.18-μm CMOS one-poly six-metal technology. A survey of the literature shows that a prototype of such a BPF has the lowest normalized area per resonator of active BPFs. The synthetic transmission line, which is used in the active BPF herein, enables the prototype to be substantially miniaturized. Moreover, this paper describes a modified composite cross-coupled nMOS resonator that can equalize passband ripples. A comparison between the measured and simulated data verifies the third-order filter response with 8% 3-dB bandwidth at 1.58 GHz. The insertion loss is 0.68 dB at the central frequency with a passband ripple of 1.24 dB and the active BPF consumes 8 mA from a 1.8-V supply.
Keywords :
CMOS integrated circuits; active filters; band-pass filters; transmission lines; BPF; CMOS active bandpass filter; CMOS one-poly six-metal technology; composite cross-coupled nMOS resonator; current 8 mA; frequency 1.58 GHz; insertion loss; passband flatness; passband ripples; size 0.18 micron; synthetic transmission line; third-order active bandpass filter; voltage 1.8 V; Band pass filters; CMOS integrated circuits; CMOS technology; MOS devices; Passband; Propagation losses; Resonant frequency; Active bandpass filter (BPF); CMOS; passband ripple; transmission line (TL);
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2011.2160196