Title :
A nonequilibrium one-dimensional quantum-mechanical simulation for AlGaAs/GaAs HEMT structures
Author :
Takano, Chiaki ; Yu, Zhiping ; Dutton, Robert W.
Author_Institution :
Integrated Circuits Lab., Stanford Univ., CA, USA
fDate :
11/1/1990 12:00:00 AM
Abstract :
An accurate method of simulating nonequilibrium gate current and sheet-carrier concentration in AlGaAs/GaAs HEMT structures is reported. The calculation is based upon self-consistent solving of Schrodinger´s equation, Poisson´s equation and continuity equations. A concept for three-dimensional electrons accompanied by two-dimensional electrons in a quantum well at a heterointerface makes it possible to solve the continuity equation at the quantum-well region. Thermionic emission theory is applied for the current expression across an abrupt heterointerface. As a result, there is a certain voltage drop across the heterointerface, which helps prevent the creation of the neutral region in the AlGaAs layer. Simulated results explain measured gate-current and channel-conductance characteristics of a HEMT structure
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; semiconductor device models; 1D quantum mechanical simulation; AlGaAs-GaAs; HEMT structures; Poisson´s equation; Schrodinger´s equation; abrupt heterointerface; channel-conductance characteristics; continuity equations; interface voltage drop; nonequilibrium gate current; quantum-well region; sheet-carrier concentration; three-dimensional electrons; two-dimensional electrons; Current measurement; Effective mass; Electrons; Gallium arsenide; HEMTs; Laboratories; Poisson equations; Schottky barriers; Thermionic emission; Voltage;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
