DocumentCode :
1268510
Title :
Fourier method modeling of semiconductor devices
Author :
Axelrad, Valery
Author_Institution :
Lehrstuhl fuer Intergrerte Schaltungen, Tech. Univ. Munchen, West Germany
Volume :
9
Issue :
11
fYear :
1990
fDate :
11/1/1990 12:00:00 AM
Firstpage :
1225
Lastpage :
1237
Abstract :
A high-order approach to a numerical modeling of semiconductor devices is presented. The method combines the classical Fourier-series Galerkin procedure, a special matrix calculus, and fast numerical pseudospectral techniques. The proposed algorithm renders the exact solution (machine precision) of the semiconductor equations in the closed form of a trigonometric polynomial. The condition number of the diagonally dominant discrete equations is near unity. As a consequence, a highly accurate solution is achieved at moderate computer costs. The method has been implemented for one- and two-dimensional device models. Properties of the procedure are demonstrated with examples
Keywords :
semiconductor device models; series (mathematics); 1D device models; Fourier-series Galerkin procedure; fast numerical pseudospectral techniques; matrix calculus; numerical modeling; semiconductor devices; semiconductor equations; trigonometric polynomial; two-dimensional device models; Bipolar transistors; Costs; Integral equations; Jacobian matrices; Mesh generation; Moment methods; Numerical models; Polynomials; Semiconductor devices; Semiconductor diodes;
fLanguage :
English
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
Publisher :
ieee
ISSN :
0278-0070
Type :
jour
DOI :
10.1109/43.62760
Filename :
62760
Link To Document :
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