Title :
Fourier method modeling of semiconductor devices
Author_Institution :
Lehrstuhl fuer Intergrerte Schaltungen, Tech. Univ. Munchen, West Germany
fDate :
11/1/1990 12:00:00 AM
Abstract :
A high-order approach to a numerical modeling of semiconductor devices is presented. The method combines the classical Fourier-series Galerkin procedure, a special matrix calculus, and fast numerical pseudospectral techniques. The proposed algorithm renders the exact solution (machine precision) of the semiconductor equations in the closed form of a trigonometric polynomial. The condition number of the diagonally dominant discrete equations is near unity. As a consequence, a highly accurate solution is achieved at moderate computer costs. The method has been implemented for one- and two-dimensional device models. Properties of the procedure are demonstrated with examples
Keywords :
semiconductor device models; series (mathematics); 1D device models; Fourier-series Galerkin procedure; fast numerical pseudospectral techniques; matrix calculus; numerical modeling; semiconductor devices; semiconductor equations; trigonometric polynomial; two-dimensional device models; Bipolar transistors; Costs; Integral equations; Jacobian matrices; Mesh generation; Moment methods; Numerical models; Polynomials; Semiconductor devices; Semiconductor diodes;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on