HEMT modelling using semi-physical expressions for the equilibrium space-charge parameters of the modulation-doped heterojunction

Author

Ramakrishna, S. ; Karmalkar, S.

Author_Institution

Dept. of Electr. Eng., Indian Inst. of Technol., Chennai, India

Volume

146

Issue

4

fYear

1999

fDate

8/1/1999 12:00:00 AM

Firstpage

211

Lastpage

214

Abstract

Simple expressions are derived for the 2-DEG concentration in the lightly doped side and the partially depleted space-charge width on the heavily doped side of a modulation-doped heterojunction under equilibrium. The derivation employs physical reasoning to determine the mathematical form of the expressions and fixes the constants in the form empirically so that the results of the expressions agree with those of numerical calculations. It is shown that the expressions derived enable an easy estimation of the maximum gate voltage swing, and can be used to construct a mathematical representation of the nonlinear gradual saturation segment of the 2-DEG concentration against gate voltage characteristics, for circuit simulation purposes

Keywords

heavily doped semiconductors; high electron mobility transistors; semiconductor device models; space-charge-limited conduction; two-dimensional electron gas; 2-DEG concentration; HEMT modelling; circuit simulation purposes; equilibrium space-charge parameters; gate voltage characteristics; gate voltage swing; heavily doped side; lightly doped side; modulation-doped heterojunction; nonlinear gradual saturation segment; partially depleted space-charge width; semi-physical expressions;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19990477

Filename

803797