Simple method for the determination of the coupling coefficient of floating-gate MOSFETs programmed with Fowler-Nordheim tunnelling

Regarding characterisation of floating-gate devices, a very simple and reliable method with a straightforward mathematical basis for the coupling coefficient characterisation, is proposed. This is valid for devices that make use of Fowler-Nordheim tunnelling for injecting or extracting charge, without a correlation to similar MOS structures having no floating gate. Also, it is not necessary to calculate or measure the charge present on the floating gate. The set-up used for the measurement of the coupling coefficient is the same one as that implemented for threshold voltage extrapolation, with different polarisation conditions from where this parameter can be correlated just with the voltages applied to the terminals of the floating-gate device. Some measurements were made showing that the proposed method is very simple