Title :
Modelling DC characteristics of GaAs MESFET devices using a simple and accurate analytic tool
Author :
Ibrahim, S.A. ; El-Rabaie, Sayed
Author_Institution :
Fac. of Electron. Eng., Menofia Univ., Egypt
Abstract :
A simple equation that relates the drain current to the gate and source voltages of GaAs MESFET devices is presented. The proposed equation covers the entire Ids/Vds characteristics with no limitations. The parameters of the equation are evaluated easily using simple analytic tools without optimisation. Results show that the proposed formula gives accurate fitting results compared with the most popular used formula (the Curtice equation). Typical CPU times for evaluating the modelling parameters for a NEC71000 device using the two models are in the ratio of 1:50.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electronic engineering computing; gallium arsenide; semiconductor device models; CPU times; Curtice equation; DC characteristics; GaAs; I/V characteristics; MESFET devices; NEC71000 device; analytic tool; drain current; gate voltage; modelling parameters; optimisation; source voltages;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901218
