Title :
Design and fabrication of low-threshold 1.55-μm graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes
Author :
Yamamoto, Norio ; Yokoyama, Kiyoyuki ; Yamanaka, Takayuki ; Yamamoto, Mitsuo
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
fDate :
7/1/1997 12:00:00 AM
Abstract :
This paper presents a guideline for designing an optimum low-threshold 1.55-μm graded-index (GRIN) separate confinement-heterostructure (SCH) strained InGaAsP single quantum-well (SQW) laser diode (LD). The guideline was formulated based on the results of numerical and experimental analysis. After calculating the sheet carrier density at the lasing threshold, the guideline was obtained by considering the tradeoff between carrier and optical confinements in the well: the GRIN layer energy gap should be varied parabolically from InP to InGaAsP having a band gap wavelength of 1.1 μm to inject a large number of carriers into the well, and the thickness of one side of the GRIN layer should be more than 300 nm to keep a strong optical confinement. The GRIN SQW LD designed using the guideline has a Jth as low as 98 A/cm2 at a cavity length of 5 mm, which proves the guideline is effective for designing low-threshold 1.55-μm GRIN SQW LDs
Keywords :
III-V semiconductors; carrier density; gallium arsenide; gallium compounds; gradient index optics; indium compounds; laser cavity resonators; laser theory; laser transitions; optical design techniques; optical fabrication; optimisation; quantum well lasers; semiconductor device models; 1.1 mum; 1.55 mum; 300 nm; 5 mm; GRIN SQW LD design; GRIN layer; GRIN layer energy gap; InGaAsP; InGaAsP SQW GRIN laser diode; InGaAsP single-quantum-well laser diodes; band gap wavelength; cavity length; lasing threshold; low-threshold 1.55-μm GRIN SQW LDs; low-threshold 1.55-μm graded-index separate-confinement heterostructure strained InGaAsP single-quantum-well laser diodes; optical confinements; optimum low-threshold laser design; sheet carrier density; strong optical confinement; Carrier confinement; Charge carrier density; Diode lasers; Fabrication; Guidelines; Indium phosphide; Optical design; Poisson equations; Quantum well lasers; Semiconductor lasers;
Journal_Title :
Quantum Electronics, IEEE Journal of
