Monte Carlo simulations of charge transport in high-speed lasers

Author

Crow, G.C. ; Abran, R.A.

Author_Institution

Dept. of Phys., Durham Univ., UK

Volume

33

Issue

7

fYear

1997

fDate

7/1/1997 12:00:00 AM

Firstpage

1190

Lastpage

1196

Abstract

A self-consistent ensemble Monte Carlo calculation of carrier transport in multiple-quantum-well lasers has been developed in an effort to understand the impact of picosecond carrier dynamics upon the modulation bandwidth. The model has been applied to InGaAsP-based devices which are designed to emit at 1550 nm. Results are discussed for structures with ungraded confinement layers of varied width and different numbers of QWs. Simulations have been carried out at fixed and also modulated bias, from which the intrinsic frequency response can be derived

Keywords

III-V semiconductors; Monte Carlo methods; carrier mobility; frequency response; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser theory; laser transitions; quantum well lasers; semiconductor device models; 1550 nm; InGaAsP; InGaAsP-based devices; Monte Carlo simulations; carrier transport; charge transport; high-speed lasers; intrinsic frequency response; modulated bias; modulation bandwidth; multiple-quantum-well lasers; picosecond carrier dynamics; quantum well lasers; self-consistent ensemble Monte Carlo calculation; simulations; ungraded confinement layers; varied width; Bandwidth; Carrier confinement; Charge carrier processes; Diode lasers; High speed optical techniques; Laser modes; Optical coupling; Optical scattering; Quantum well lasers; Semiconductor lasers;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.594883

Filename

594883