Title :
Carrier lifetime increase in silicon by gettering with a MeV-implanted carbon-rich layer
Author :
Skorupa, Wolfgang ; Kogler, R. ; Schmalz, K.
Author_Institution :
Central Inst. for Nucl. Res., Dresden, East Germany
Abstract :
The gettering efficiency of silicon implanted with carbon ions in the energy range 0.33-10 MeV was tested by carrier lifetime measurements. After an intentional contamination of the sample back side with gold as a lifetime killer, the authors found values for the generation lifetime of the minority carriers on the front side higher by 1-2 orders of magnitude as compared with unimplanted silicon.
Keywords :
carbon; carrier lifetime; elemental semiconductors; getters; ion implantation; minority carriers; silicon; 0.33 to 10 MeV; Au lifetime killer; MeV-implanted carbon-rich layer; Si:C; carrier lifetime measurements; gettering efficiency; intentional contamination; minority carriers; sample back side; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901222
