Title :
Integrated Hydrogen-Sensing Amplifier With GaAs Schottky-Type Diode and InGaP–GaAs Heterojunction Bipolar Transistor
Author :
Chiu, Shao-Yen ; Tsai, Jung-Hui ; Huang, Hsuan-Wei ; Liang, Kun-Chieh ; Tsai, Tzung-Min ; Hsu, Kuo-Yen ; Lour, Wen-Shung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Ocean Univ., Keelung, Taiwan
Abstract :
New hydrogen-sensing amplifiers are fabricated by integrating a GaAs Schottky-type hydrogen sensor and an InGaP-GaAs heterojunction bipolar transistor. Sensing collector currents (ICN and ICH) reflecting to N2 and hydrogen-containing gases are employed as output signals in common-emitter characteristics. Gummel-plot sensing characteristics with testing gases as inputs show a high sensing-collector-current gain (ICH/ICN) of > 3000. When operating in standby mode for in situ long-term detection, power consumption is smaller than 0.4 ??W. Furthermore, the room-temperature response time is 85 s for the integrated hydrogen-sensing amplifier fabricated with a bipolar-type structure.
Keywords :
III-V semiconductors; Schottky diodes; amplifiers; gallium arsenide; heterojunction bipolar transistors; indium compounds; sensors; wide band gap semiconductors; InGaP-GaAs; Schottky-type diode; Schottky-type hydrogen sensor; bipolar-type structure; common-emitter characteristic; gummel-plot sensing characteristic; heterojunction bipolar transistor; high sensing-collector-current gain; integrated hydrogen-sensing amplifier; power consumption; room temperature response time; sensing collector current; time 85 s; Bipolar; InGaP–GaAs; Schottky diode; heterojunction; hydrogen sensor;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2025894
