Title :
DC and microwave performance of OMVPE-grown AlInAs/InP HEMTs
Author :
Aina, L. ; Serio, M. ; Mattingly, M. ; Hempfling, E. ; Chien, H.
Author_Institution :
Allied-Signal Aerosp. Co., Columbia, MD, USA
Abstract :
AlInAs/InP HEMTs with extrinsic transconductances of 267 mS/mm at 300 K and 342 mS/mm at 77 K are reported. The corresponding intrinsic transconductance at 300 K is estimated to be 615 mS/mm. These 0.80 mu m gate length devices also exhibit high microwave gains with fmax as high as 65 GHz and fT of 22 GHz. These are some of the best results reported for InP channel devices.
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; high electron mobility transistors; indium compounds; power transistors; semiconductor device models; solid-state microwave devices; vapour phase epitaxial growth; 0.8 micron; 22 GHz; 267 mS; 300 K; 342 mS; 615 mS; 65 GHz; 77 K; AlInAs-InP; DC performance; InP channel devices; OMVPE-grown; equivalent circuit model; extrinsic transconductances; intrinsic transconductance; microwave performance; power devices;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901231
