DocumentCode
1269882
Title
DC and microwave performance of OMVPE-grown AlInAs/InP HEMTs
Author
Aina, L. ; Serio, M. ; Mattingly, M. ; Hempfling, E. ; Chien, H.
Author_Institution
Allied-Signal Aerosp. Co., Columbia, MD, USA
Volume
26
Issue
22
fYear
1990
Firstpage
1912
Lastpage
1913
Abstract
AlInAs/InP HEMTs with extrinsic transconductances of 267 mS/mm at 300 K and 342 mS/mm at 77 K are reported. The corresponding intrinsic transconductance at 300 K is estimated to be 615 mS/mm. These 0.80 mu m gate length devices also exhibit high microwave gains with fmax as high as 65 GHz and fT of 22 GHz. These are some of the best results reported for InP channel devices.
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; high electron mobility transistors; indium compounds; power transistors; semiconductor device models; solid-state microwave devices; vapour phase epitaxial growth; 0.8 micron; 22 GHz; 267 mS; 300 K; 342 mS; 615 mS; 65 GHz; 77 K; AlInAs-InP; DC performance; InP channel devices; OMVPE-grown; equivalent circuit model; extrinsic transconductances; intrinsic transconductance; microwave performance; power devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19901231
Filename
59500
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