Title :
Ballistic deposition simulation of via metallization using a quasi-three-dimensional model
Author :
Smy, Tom ; Tait, R. Niall ; Brett, Michael J.
Author_Institution :
Carleton Univ., Ottawa, Ont., Canada
fDate :
1/1/1991 12:00:00 AM
Abstract :
A quasi-three-dimensional ballistic deposition model for thin film growth by physical vapor deposition is described. This model incorporates three-dimensional incident flux distributions and shadowing effects, but simulates deposition through disc accretion in a two-dimensional plane. Results from the simulation of sputtered metal deposition over vias ranging from 0.5 to 3.0 μm width are presented and compared with two-dimensional simulation results. Step coverages are calculated and plotted as a function of via size. The use of a ballistic deposition program enables a density analysis of the simulated films. The simulated films display a drop in density of 22-27% for the films deposited on the via sidewalls, and this density drop is plotted versus via size for both the two-dimensional and three-dimensional simulations
Keywords :
digital simulation; electronic engineering computing; metallisation; sputtered coatings; vapour deposition; 0.5 to 3.0 micron; 2D; 3D; SIMBAD; VLSI; ballistic deposition model; ballistic deposition simulation; density analysis; density drop; disc accretion; incident flux distributions; physical vapor deposition; quasi-three-dimensional model; shadowing effects; sidewalls; simulated films; sputtered metal deposition; thin film growth; two-dimensional plane; two-dimensional simulation; via metallization; Analytical models; Atomic layer deposition; Chemical vapor deposition; Metallization; Packaging; Shadow mapping; Sputtering; Thin film circuits; Three dimensional displays; Very large scale integration;
Journal_Title :
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
