Title :
In/sub 0.25/Ga/sub 0.75/As/AlAs-based resonant tunneling diodes grown on prepatterned and nonpatterned GaAs
Author :
Kapre, R. ; Madhukar, A. ; Guha, S.
Author_Institution :
Univ. of Southern California, Los Angeles, CA, USA
fDate :
6/1/1990 12:00:00 AM
Abstract :
The DC current-voltage characteristics of strained In/sub 0.25/Ga/sub 0.75/As/AlAs resonant tunneling diode (RTD) structures grown on GaAs
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; tunnel diodes; 300 K; 77 K; DC current-voltage characteristics; GaAs substrate; In/sub 0.25/Ga/sub 0.75/As-AlAs; peak current densities; peak-to-valley current ratios; prepatterned mesas; resonant tunneling diodes; strained system; substrate patterning; Capacitive sensors; Current density; Current-voltage characteristics; Diodes; Gallium arsenide; Indium phosphide; Kinetic theory; Laboratories; Resonant tunneling devices; Tensile strain;
Journal_Title :
Electron Device Letters, IEEE
