DocumentCode :
127105
Title :
Semiconductor reliability using random and wearout failure models
Author :
Bechtold, L.E. ; Redman, D. ; Tawfellos, Bahig
Author_Institution :
Boeing Commercial Airplanes, Seattle, WA, USA
fYear :
2014
fDate :
27-30 Jan. 2014
Firstpage :
1
Lastpage :
6
Abstract :
A new research project is developing a simple reliability prediction methodology for random failure rate and the time to intrinsic wearout. The models to be incorporated account for the latest advancement of the semiconductor technology and take into consideration the latest research in reliability assessment. Using common physics of failure (PoF) models for both intrinsic wearout and random failures, the project will seek data and analysis from semiconductor manufacturers, leaving most of the proprietary details to them, and only use the models to scale results between use conditions. This paper describes a methodology that is currently in development and not yet produced. Development of the models is based on aerospace industry collaboration and data from semiconductor manufacturers and foundries.
Keywords :
semiconductor device models; semiconductor device reliability; semiconductor technology; physics of failure models; random failure rate; semiconductor reliability; semiconductor technology; Aerospace industry; Integrated circuit modeling; Integrated circuit reliability; Mathematical model; Predictive models; Reliability engineering; Physics-of-Failure; Predictions; Semiconductor Reliability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability and Maintainability Symposium (RAMS), 2014 Annual
Conference_Location :
Colorado Springs, CO
Print_ISBN :
978-1-4799-2847-7
Type :
conf
DOI :
10.1109/RAMS.2014.6798499
Filename :
6798499
Link To Document :
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