Title :
High channel mobility in inversion layers of 4H-SiC MOSFETs by utilizing (112~0) face
Author :
Yano, H. ; Hirao, T. ; Kimoto, T. ; Matsunami, H. ; Asano, K. ; Sugawara, Y.
Author_Institution :
Dept. of Electron. Sci. & Eng., Kyoto Univ., Japan
Abstract :
A dramatic improvement of inversion channel mobility in 4H-SiC MOSFETs was successfully achieved by utilizing the (112~0) face: 17 times higher (95.9 cm2/Vs) than that on the conventional (0001) Si-face (5.59 cm2/Vs). A low threshold voltage of MOSFETs on the (112~0) face indicates that the (112~0) MOS interface has fewer negative charges than the (0001) MOS interface. Small anisotropy of channel mobility in 4H-SiC MOSFETs (μ/sub (11~00)//μ/sub (0001)/=0.85) reflects the small anisotropy in bulk electron mobility.
Keywords :
MOSFET; electron mobility; inversion layers; silicon compounds; wide band gap semiconductors; 4H-SiC MOSFET; SiC; anisotropy; channel mobility; inversion layer; threshold voltage; Anisotropic magnetoresistance; Annealing; Electric breakdown; Electron mobility; Epitaxial growth; Fabrication; MOSFET circuits; Oxidation; Silicon carbide; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
