Title :
An efficient low voltage, high frequency silicon CMOS light emitting device and electro-optical interface
Author :
Snyman, L.W. ; du Plessis, M. ; Seevinck, E. ; Aharoni, H.
Author_Institution :
Dept. of Electr. & Electron. Eng., Pretoria Univ., South Africa
Abstract :
A silicon light emitting device was designed and realized utilizing a standard 2-μm industrial CMOS technology design and processing procedure. The device and its associated driving circuitry were integrated in a CMOS integrated circuit and can interface with a multimode optical fiber. The device delivers 8 nW of optical power (450-850 nm wavelength) per 20-μm diameter of chip area at 4.0 V and 5 mA. The device emits light by means of a surface assisted Zener breakdown process that occurs laterally between concentrically arranged highly doped n/sup +/ rings and a p/sup +/ centroid, which are all coplanarly arranged with an optically transparent Si-SiO2 interface. Theoretical and experimental determinations with capacitances and series resistances indicate that the device has an intrinsic high-frequency operating capability into the near gigahertz range.
Keywords :
CMOS integrated circuits; Zener effect; elemental semiconductors; integrated optoelectronics; light emitting devices; low-power electronics; silicon; 2 micron; 4.0 V; 450 to 850 nm; 5 mA; 8 nW; CMOS integrated circuit; Si-SiO/sub 2/; Si-SiO/sub 2/ interface; Zener breakdown; electro-optical interface; high frequency silicon light emitting device; low voltage operation; multimode optical fiber; CMOS integrated circuits; CMOS process; CMOS technology; Frequency; Integrated circuit technology; Low voltage; Optical devices; Process design; Silicon; Stimulated emission;
Journal_Title :
Electron Device Letters, IEEE
