Title :
Counter-doped MOSFETs of 4H-SiC
Author :
Ueno, Katsunori ; Oikawa, Tadaaki
Author_Institution :
Fuji Electr. Corp. Res. & Dev. Ltd., Matsumoto, Japan
Abstract :
In this paper, we investigate the effect of counter-doping of nitrogen at the channel region of epitaxial n-channel 4H-SiC MOSFETs on the channel mobility and the threshold voltage. From this study, we have found that the channel mobility steeply improves as the nitrogen dose increases. At a dose of 2/spl times/ or 2.5/spl times/10/sup 12/ cm/sup -2/ the enhancement MOSFET has achieved an effective channel mobility of 20 cm/sup 2//Vs or a field effect mobility of 38 cm/sup 2//Vs at a peak.
Keywords :
carrier mobility; nitrogen; power MOSFET; semiconductor doping; silicon compounds; wide band gap semiconductors; 4H-SiC; N counter doping; SiC:N; channel mobility; channel region doping; counter-doped MOSFETs; epitaxial n-channel MOSFET; threshold voltage; Electron mobility; Epitaxial layers; Impurities; MOSFET circuits; Nitrogen; Oxidation; Power MOSFET; Silicon carbide; Substrates; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
