Title :
Room temperature single electron effects in a Si nano-crystal memory
Author :
Kim, Ilgweon ; Han, Sangyeon ; Han, Kwangseok ; Lee, Jongho ; Shin, Hyungcheol
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
An MOS memory based on Si nano-crystals has been fabricated. We have developed a repeatable process of forming uniform, small-size and high-density Si nano-crystals and spherical nano-crystals of about 4.5 nm in diameter with density of 5/spl times/10/sup 11//cm/sup 2/ were obtained. Threshold voltage shift of 0.48 V corresponding to single electron storage in individual nano-crystals is obtained. For the first time, room temperature single electron effects are observed. These prove the feasibility of practical Si nano-crystal memory.
Keywords :
Coulomb blockade; MOS memory circuits; elemental semiconductors; nanostructured materials; nanotechnology; semiconductor quantum dots; semiconductor storage; silicon; tunnelling; 0.48 V; 4.5 nm; MOS memory; Si; Si nano-crystal memory; high-density nano-crystal formation; repeatable fabrication process; room temperature single electron effects; single electron storage; spherical nano-crystals; tunnelling dielectrics; Dielectric losses; Dielectric substrates; Electrons; Energy states; Fabrication; Nanoscale devices; Oxidation; Quantum dots; Temperature; Tunneling;
Journal_Title :
Electron Device Letters, IEEE
