Title :
Modeling manufacturing yield and reliability
Author :
Kim, Taeho ; Kuo, Way
Author_Institution :
Korea Telecom, Taejon, South Korea
fDate :
11/1/1999 12:00:00 AM
Abstract :
In this paper, we introduce the concept of reliability defect, present the time-dependent defect growth model during operations based on a defect-related gate oxide breakdown mechanism, and build the yield-reliability relation model. Discussions presented here can also be applicable to other device failures when different physics-of-failure mechanisms are found. Through the relation model, it is possible to find a minimum level of latent defect screening to assure the required level of reliability and predict reliability for new products when it is combined with a yield prediction model
Keywords :
failure analysis; integrated circuit modelling; integrated circuit reliability; integrated circuit yield; semiconductor device breakdown; semiconductor process modelling; defect-related gate oxide breakdown mechanism; device failures; latent defect screening; manufacturing yield; physics-of-failure mechanisms; reliability; reliability defect; time-dependent defect growth model; yield prediction model; yield-reliability relation model; Electric breakdown; Helium; Integrated circuit yield; Manufacturing processes; Predictive models; Probability; Semiconductor device manufacture; Semiconductor device reliability; Testing; Virtual manufacturing;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
