Title :
IMPATT operation below the avalanche frequency
Author_Institution :
Daimler Benz Res., Ulm, Germany
Abstract :
Very high output powers are obtained with double drift IMPATT diodes at current densities which shift the avalanche frequency above the oscillation frequency: 30-40 W pulsed around 90 GHz. This operation mode cannot be explained in terms of the conventional READ theory. A numerical large signal simulation shows that avalanche multiplication over the whole diode takes place. At high current densities the double drift device behaves like a pin diode without the unfavourable breakdown of the ionisation process in the centre of the diode.
Keywords :
IMPATT diodes; elemental semiconductors; semiconductor device models; silicon; 30 to 40 W; 90 GHz; EHF; IMPATT operation; MM-wave devices; Si; avalanche resonance frequency; double drift IMPATT diodes; high current densities; high output powers; numerical large signal simulation; operation below avalanche frequency; operation mode; whole diode avalanche multiplication;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901268
