Title :
Tunneling time asymmetry in semiconductor heterostructures
Author :
Dragoman, Daniela
Author_Institution :
Dept. of Phys., Bucharest Univ., Romania
fDate :
12/1/1999 12:00:00 AM
Abstract :
Analytical expressions are given for the difference between left-to-right and right-to-left tunneling times in asymmetric single- and multiple-barrier heterostructures. This tunneling time asymmetry is related to the phase difference of the reflection coefficients of the electron wavefunction for the two tunneling directions. Examples for single- and double-barrier heterostructures are given. The treatment in this paper can be used for designing devices with asymmetric frequency characteristics with respect to the electron tunneling direction
Keywords :
semiconductor heterojunctions; tunnelling; wave functions; device design; double-barrier structure; electron wavefunction; phase difference; reflection coefficient; semiconductor heterostructure; single-barrier structure; tunneling time asymmetry; Berry phase; Current density; Distribution functions; Electrons; Frequency; Numerical simulation; Optical reflection; Quantum mechanics; Resonance; Resonant tunneling devices;
Journal_Title :
Quantum Electronics, IEEE Journal of
