DocumentCode :
1271942
Title :
Lateral mode dynamics of semiconductor lasers
Author :
Gordon, Reuven ; Xu, Jimmy
Author_Institution :
Dept. of Electr. Eng., Toronto Univ., Ont., Canada
Volume :
35
Issue :
12
fYear :
36495
fDate :
12/1/1999 12:00:00 AM
Firstpage :
1904
Lastpage :
1911
Abstract :
The interaction between two lateral modes in a waveguide semiconductor laser is studied. The effects of carrier diffusion are included into the governing rate equations. A linear stability analysis is used to identify regions of frequency locking between the lateral modes. Numerical integration shows the effects of the diffusion length and other system parameters on the lateral mode dynamics. It is shown that variations in the carrier diffusion length give rise to regimes of single-mode dominance, oscillation, chaos, and frequency locking. Direct experimental observations of higher order lateral modes in lasers exhibiting beam instabilities are presented. Observations of bistable beam steering with hysteresis are presented and explained
Keywords :
laser beams; laser mode locking; laser modes; laser theory; optical bistability; semiconductor device models; semiconductor lasers; waveguide lasers; beam instabilities; bistable beam steering; carrier diffusion; chaos; diffusion length; governing rate equations; hysterersis; laser frequency locking; lateral mode dynamics; lateral modes; linear stability analysis; oscillation; semiconductor lasers; single-mode dominance; system parameters; waveguide semiconductor laser; Chaos; Equations; Frequency; Laser beams; Laser mode locking; Laser modes; Semiconductor lasers; Semiconductor waveguides; Stability analysis; Waveguide lasers;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.806607
Filename :
806607
Link To Document :
بازگشت