Title :
Highly reliable uni-travelling-carrier photodiodes for 40 Gbit/s optical transmission systems
Author :
Furuta, T. ; Fushimi, H. ; Yasui, I. ; Muramoto, Y. ; Kamioka, H. ; Mawatari, H. ; Fukano, H. ; Ishibashi, T. ; Ito, H.
Author_Institution :
NTT Photonics Labs., Kanagawa, Japan
fDate :
3/28/2002 12:00:00 AM
Abstract :
The reliability of InP/InGaAs uni-travelling-carrier photodiodes has been studied. A failure rate of 42 FIT at 25/spl deg/C was estimated from long-term bias-temperature stress tests. Stable operations for over 2000 h were also confirmed under higher-power optical input conditions.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; life testing; optical receivers; photodiodes; semiconductor device reliability; 2000 h; 25 C; 40 Gbit/s; I-V characteristics; InP-InGaAs; accelerated test; dark currents; failure rate; high-bit-rate communication; high-output capability; highly reliable photodiodes; long-term bias-temperature stress tests; optical injection tests; optical transmission systems; photoreceiver; power dissipation tolerance; responsivity; stable operations; uni-travelling-carrier photodiodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020213
