Title :
Low-noise visible-blind UV avalanche photodiodes with edge terminated by 2° positive bevel
Author :
Yan, E. ; Qin, C. ; Zhao, J.H. ; Weiner, M. ; Ng, B.K. ; David, J.P.R. ; Tozer, R.C.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ, USA
fDate :
3/28/2002 12:00:00 AM
Abstract :
4H-SiC avalanche photodiodes edge terminated by a 2° positive bevel have been fabricated and characterised. Low leakage current, positive temperature dependence of breakdown voltage, high avalanche gain and very low noise have been achieved
Keywords :
avalanche photodiodes; impact ionisation; leakage currents; photodetectors; semiconductor device noise; silicon compounds; ultraviolet detectors; wide band gap semiconductors; Franz-Keldysh effect; SiC; UV avalanche photodiodes; breakdown voltage; excess avalanche noise; high avalanche gain; impact ionisation rate; low leakage current; low-noise visible-blind photodiodes; phase-sensitive detection; positive bevel terminated edge; positive temperature dependence; reverse I-V characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020216
