Doping effects on thermal behaviour of silicon resistor

Doping effects on the thermal behaviour of a silicon resistor are studied using different models of hole mobility. The results indicate that the two thermal coefficients of the resistor are strongly dependent on doping concentration. For the first-order coefficient α, there is a minimal value (~250 ppm/°C) for a particular doping concentration (~4 × 10¹⁸ cm^-3); for the second-order coefficient β, its value decrease monotonously according to doping concentration, until zero