• DocumentCode
    1272017
  • Title

    Electro-absorption and electro-refraction in InGaAsN quantum well structures

  • Author

    Jalili, Y.S. ; Stavrinou, P.N. ; Roberts, J.S. ; Parry, G.

  • Author_Institution
    Blackett Lab., Imperial Coll. of Sci., Technol. & Med., London, UK
  • Volume
    38
  • Issue
    7
  • fYear
    2002
  • fDate
    3/28/2002 12:00:00 AM
  • Firstpage
    343
  • Lastpage
    344
  • Abstract
    The first observation of electro-absorption in a InGaAsN-GaAs single quantum well p-i-n diode structure is reported. Clear excitonic resonances were observed at room temperature at 1150 nm an a strong Stark shift is obtained for applied fields of up to 2.6 × 107 V/m. The field induced changes in refractive index were calculated at 1300 and 1550 nm and it is concluded that low voltage phase modulators could be fabricated using this material
  • Keywords
    III-V semiconductors; Stark effect; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; p-i-n diodes; refractive index; semiconductor quantum wells; 1150 to 1550 nm; InGaAsN-GaAs single quantum well; QW PIN diode structure; Stark shift; electroabsorption; electrorefraction; excitonic resonances; field induced changes; low voltage phase modulators; quantum well PIN diode structure; refractive index;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020236
  • Filename
    995501
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1272017