Title :
Accurate Extraction Method of Reverse Recovery Time and Stored Charge for Ultrafast Diodes
Author :
Kang, I.H. ; Kim, S.C. ; Bahng, W. ; Joo, S.J. ; Kim, N.K.
Author_Institution :
Center for Energy Efficient Semicond., Korea Electrotechnol. Res. Inst., Changwon, South Korea
Abstract :
This letter presents a novel extraction method to accurately determine a reverse recovery time and a stored charge for ultrafast diodes. To obtain this, a test circuit to measure those parameters was accurately modeled by considering an inductance and a parasitic resistance, which are inherently embedded in the test circuit and lead to oscillation. The experimental results showed that the corrected reverse recovery time was reduced by 1.2 ns for an Si fast recovery diode, while by 6.8 ns for an SiC Schottky barrier diode, compared to their measured reverse recovery time.
Keywords :
Schottky diodes; charge storage diodes; inductance; oscillations; silicon compounds; wide band gap semiconductors; Si; SiC; SiC Schottky barrier diode; extraction method; inductance; oscillation; parasitic resistance; recovery diode; reverse recovery time; stored charge; test circuit; ultrafast diodes; Current measurement; Inductance; Semiconductor device measurement; Semiconductor diodes; Silicon; Silicon carbide; Time measurement; Fast recovery diodes (FRDs); Schottky barrier diodes (SBDs); parasitic components; reverse recovery time $t_{rm rr}$; stored charge $Q_{rm rr}$;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2011.2161889
