Title :
InAs-based heterojunction bipolar transistors
Author :
Maimon, S. ; Averett, K.L. ; Wu, X. ; Koch, M.W. ; Wicks, G.W.
Author_Institution :
Inst. of Opt., Rochester Univ., NY, USA
fDate :
3/28/2002 12:00:00 AM
Abstract :
The first InAlAs-InAs heterojunction bipolar transistors are reported. A current gain of 100 at room temperature is measured. The base-collector junction is an InAs p-n homojunction, which is optimised to have low reverse leakage at room temperature. The emitter is pseudomorphic AlInAs, linearly graded to increase the barrier which inhibits hole injection into the emitter
Keywords :
III-V semiconductors; aluminium compounds; heterojunction bipolar transistors; indium compounds; leakage currents; InAlAs-InAs; InAlAs/InAs heterojunction bipolar transistors; InAs p-n homojunction; InAs-based HBT; base-collector junction; pseudomorphic AlInAs emitter; reverse leakage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020214
