Plessey Research (Caswell) Ltd., Allen Clark Research Centre, Towcester, UK
Volume :
27
Issue :
5
fYear :
1981
fDate :
5/1/1981 12:00:00 AM
Firstpage :
379
Lastpage :
384
Abstract :
The development of the use of gallium arsenide as a material for building integrated circuits has made possible the production of high-frequency devices operating in the microwave range. These `new-generation¿ devices have a huge market potential
