• DocumentCode
    1272363
  • Title

    High performance p+-gate pMOSFETs with N2O-nitrided SiO2 gate films

  • Author

    Uchiyama, Asami ; Fukuda, Hiroshi ; Hayashi, Teruaki ; Iwabuchi, T. ; Ohno, S.

  • Author_Institution
    Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
  • Volume
    26
  • Issue
    23
  • fYear
    1990
  • Firstpage
    1932
  • Lastpage
    1933
  • Abstract
    Sub-micrometre p+-gate surface-channel pMOSFETs have been successfully fabricated with 6-10 nm-thick nitrided SiO2 gate films formed in an N2O ambient. The devices have excellent reliability in hot-carrier-induced degradation because of the good abilities of N2O-nitrided SiO2 films in both the blocking of boron penetration and the reduction in electron traps.
  • Keywords
    dielectric thin films; electron traps; hot carriers; insulated gate field effect transistors; nitridation; reliability; silicon compounds; 6 to 10 nm; B penetration blocking; N 2O ambient; Si:B-SiO 2; SiO xN y; electron traps; gate films; hot-carrier-induced degradation; p type MOSFETs; reliability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19901250
  • Filename
    59536
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1272363