Title :
Lateral drift and recombination of photogenerated carriers in multiple quantum well hetero nipi structures
Author :
Thirstrup, C. ; Wa, P.L.K. ; Button, C.C. ; Roberts, J.S. ; Robson, P.N.
Author_Institution :
Microelectron. Centre, Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
The lateral spreading of photocarriers in a multiple quantum well hetero nipi structure is reported. The physical behaviour of the carriers is explained by a simple model. The results indicate the importance of decreasing the lateral device dimensions in order to obtain a large absorption change and a corresponding large change in the refractive index at low power levels.
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; gallium arsenide; photoelectricity; semiconductor device models; semiconductor quantum wells; GaAs; GaAs-AlGaAs hetero nipi structure; electron-hole pairs; large absorption change; laser pump beam; lateral device dimensions; lateral drift; low power levels; multiple quantum well hetero nipi structures; photocarriers; photogenerated carriers; recombination; refractive index;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19901252
