DocumentCode
1272713
Title
Propagation characteristics of surface acoustic waves in single-electron transport devices and the electrical measurement
Author
Zhang, Chuan-Yu ; Gao, Jie ; Li, Hong ; Song, Li ; Lu, Chuan
Author_Institution
Coll. of Phys. Sci. & Technol., Sichuan Univ., Chengdu, China
Volume
58
Issue
7
fYear
2011
fDate
7/1/2011 12:00:00 AM
Firstpage
1452
Lastpage
1459
Abstract
We focused on investigating the propagation characteristics of surface acoustic waves (SAWs) in SAW-based single-electron-transport (SAW/SET) devices. SAW/SET devices operating in the gigahertz frequency range were fabricated on a GaAs/AlxGa1-xAs heterostructure. The transmittance and reflection performances of SAW/SET devices were obtained via the electrical measurement. Modeling based on coupling-of-modes theory was introduced to analyze SAW/ SET devices. Based on this model, many second-order effects such as propagation loss and the mechanical and electrical loadings caused by electrode perturbation of the surface were taken into account. Multiple-transit reflections of SAWs were also contained in the calculation. The calculated transmittance and reflection performances were in good agreement with the measured data. Furthermore, we proposed four interference types which could satisfactorily explain the periodic oscillations presented in the acoustoelectric current versus frequency characteristics.
Keywords
III-V semiconductors; acoustic wave propagation; electron transport theory; gallium arsenide; single electron devices; surface acoustic wave devices; GaAs; SAW; electrical measurement; multiple-transit reflections; periodic oscillations; propagation characteristics; single-electron transport devices; surface acoustic waves; Current measurement; Electrodes; Gallium arsenide; Logic gates; Oscillators; Performance evaluation; Reflection;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2011.1964
Filename
5954000
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