Title :
Towards longwave (5-6 μm) LED operation at 80°C: injection or extraction of carriers?
Author :
Matveev, B.A. ; Zotova, N.V. ; Karandashev, S.A. ; Remennyi, M.A. ; Stus, N.M. ; Talalakin, G.N.
Author_Institution :
A.F. Ioffe Physicotech. Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
2/1/2002 12:00:00 AM
Abstract :
Graded band gap InAsSb0.2P diodes have been grown by the LPE method onto an InAs substrate. Episide down bonded LEDs operated at 20-85°C at λ ~ 5-6 μm both at forward (positive luminescence, PL) and reverse (negative luminescence, NL) bias with NL efficiency as high as 0.9-0.4 and conversion efficiency ranging from 18 (20°C) to 6.6 mW/A cm2 (85°C)
Keywords :
III-V semiconductors; electroluminescence; indium compounds; infrared sources; light emitting diodes; liquid phase epitaxial growth; 20 to 85 C; 5 to 6 micron; 80 C; InAsSbP; LPE method; carrier extraction; carrier injection; circular mesa constructions; conversion efficiency; electroluminescence; emission spectra; episide down bonded LED; forward bias; graded band gap diodes; integral output power; lattice matched heterojunction layers; longwave LED operation; mid-IR device; negative luminescence; positive luminescence; reverse bias; temperature dependence;
Journal_Title :
Optoelectronics, IEE Proceedings -
DOI :
10.1049/ip-opt:20020021
