Gain coefficient, quantum efficiency, transparency current density, and internal loss of the AlGaAs-GaAs-based lasers on Si substrate

Author

Kazi, Zaman Iqbal ; Egawa, Takashi ; Jimbo, Takashi ; Umeno, Masayoshi

Author_Institution

Dept. of Electr. & Comput. Eng., Nagoya Inst. of Technol., Japan

Volume

11

Issue

12

fYear

1999

Firstpage

1563

Lastpage

1565

Abstract

The AlGaAs-GaAs based lasers on Si substrate with GaAs quantum-well and island-like active regions are fabricated by metal-organic chemical vapor deposition. The parameters of internal quantum efficiency, gain coefficient, transparency current density, and the internal loss that describe the operating characteristics of laser diodes are investigated. The optical confinement factor is calculated with the assumption that the light emission occurs from the island regions only. In addition, longer minority carrier lifetime obtained for the lasers with island-like active regions reveals their improved characteristics over conventional quantum-well lasers.

Keywords

III-V semiconductors; MOCVD; aluminium compounds; carrier lifetime; current density; gallium arsenide; island structure; optical fabrication; optical losses; quantum well lasers; transparency; AlGaAs-GaAs; AlGaAs-GaAs-based lasers; GaAs quantum-well lasers; Si; Si substrate; gain coefficient; internal loss; internal quantum efficiency; island-like active regions; light emission; metal-organic chemical vapor deposition; minority carrier lifetime; operating characteristics; optical confinement factor; quantum efficiency; quantum-well lasers; transparency current density; Carrier confinement; Charge carrier lifetime; Chemical lasers; Chemical vapor deposition; Current density; Diode lasers; Gallium arsenide; Optical losses; Quantum well lasers; Stimulated emission;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.806847

Filename

806847